IXYS MOSFET -140 Amps -50V 0.008 Rds (EU Version)

Description Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Specifications Property Value VDSS (V) -50 RDS(ON),max @ 25 °C (Ω) 0.009 ID, cont @ 25 °C (A) -140 Gate Charge (nC) 200 RthJC (K/W) 0.42 Configuration Single Package Type TO-220 CISS (pF) 13500 trr,typ (ns) 53 PD (W) 298 Features Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages Package Includes 1 x MOSFET -140 Amps -50V 0.008 Rds